On November 11, the National Intellectual Property Administration (NIPA) revealed that Xiamen Future Display Technology Institute Co., Ltd. has filed a patent for an innovation titled “Micro-LED Chip with Stacked Layers and Its Fabrication Method” (Patent No. CN118919622A), which was filed in September 2024.

Micro LED Patent Summary
The invention introduces a Micro-LED chip with stacked layers and its fabrication method. The key feature of this invention is the use of staircase-shaped stacking technology, which ensures that all P-type semiconductor layers have their respective electrode access regions on corresponding stepped surfaces. This enables the independent driving of three distinct light-emitting structures (first, second, and third), maximizing the wafer area utilization and achieving full-color Micro-LEDs. This approach also helps reduce production costs by optimizing wafer space.
Additionally, the patent features a bonding method that links the P-type semiconductor layers of the first and second light-emitting structures using an insulating bonding layer. This innovative bonding method avoids issues such as uneven bonding thickness during the process, which can lead to incomplete etching when using polymer adhesives for bonding.

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