Professor Pan Anlian’s research group, supported by the National Distinguished Young Scholars program, has reported a high-brightness green Micro-LED with 5 µm pixels, utilizing high-quality GaN-on-Si epitaxial layers. The process begins by growing a four-inch green GaN epitaxial layer on a silicon substrate, which exhibits wafer-level uniformity. Key features include a low dislocation density of 5.25 × 10⁸ cm⁻², a small wafer bowing of 16.7 μm, and high wavelength uniformity with a standard deviation (STDEV) of less than 1 nm. The layer also has the potential to be scaled up to six inches. Based on the high-quality GaN epitaxial layer, a green Micro-LED with 5 μm pixels was designed using vertical non-aligned bonding technology.
To read more, please click: Ultra-High Brightness Micro-LEDs with Wafer-Scale Uniform GaN-on-Silicon Epilayers
DOI: 10.1038/s41377-024-01639-3

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