A New Structure and Manufacturing Method for Blue Micro-LEDs
According to information from the National Intellectual Property Administration, Jiangxi SMTC Co., Ltd. has applied for a patent titled “A New Structure and Manufacturing Method for Blue Micro-LEDs” (Publication No. CN118825157A), with an application date of September 2024.
This patent can reduce stress during the growth of InGaN quantum wells, significantly improving the quality of the multi-quantum well light-emitting layer while enhancing hole injection efficiency in the P-type semiconductor layer. As a result, it enhances the performance of Micro LED chips, such as light efficacy and yield, under low operating current densities, making it suitable for small, low-current, and low-power blue Micro LEDs.
The patent abstract indicates that the invention pertains to the field of semiconductor materials, disclosing a blue Micro-LED structure and its manufacturing method. The epitaxial structure includes a substrate and a series of layers stacked sequentially on the substrate: a buffer layer, an N-type semiconductor layer, a low-temperature stress-relief layer, a multi-quantum well light-emitting layer, an electron-blocking layer, and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises four sub-layers of blue and light blue quantum wells stacked from bottom to top, each being a superlattice structure of InGaN quantum well layers and multi-quantum barrier layers.
A New Structure and Manufacturing Method for Micro-LEDs
Additionally, SMTC has applied for another patent titled “A New Structure and Manufacturing Method for Micro-LEDs” (Publication No. CN118825159A), also with an application date of September 2024.
This patent aims to reduce stress during the growth of multi-quantum well layers by introducing an insertion layer between the N-type doped GaN layer and the multi-quantum well layer. This helps decrease the dislocation density in the multi-quantum well layer, thereby improving its crystal quality, which in turn enhances the internal quantum efficiency of Micro LEDs, reduces operating voltage, and increases luminous brightness.
The patent abstract indicates that this invention also pertains to semiconductor materials, disclosing a Micro LED structure and its manufacturing method. The epitaxial structure includes a substrate and a series of layers stacked on the substrate: a buffer layer, an undoped GaN layer, an N-type doped GaN layer, an insertion layer, a multi-quantum well layer, an electron-blocking layer, a P-type doped GaN layer, and a contact layer. The insertion layer consists of an AlN layer, a patterned GaSb layer, an Al metal layer, and an InGaN layer, sequentially arranged on the N-type doped GaN layer.
Data shows that SMTC was established in Nanchang, Jiangxi, in 2017. Currently, SMTC is the world’s largest single-site production base for digital smart LED chips, and it is the primary revenue source for SMTC’s LED business sector, with a production and sales scale reaching 1.1 million wafers (4-inch wafers) per month.
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