On November 1, 2024, Jiangxi SMTC Semiconductor Co., Ltd. announced the application for an invention patent titled “Epitaxial Structure for Micro-LED and Its Fabrication Method” (Patent Application No. CN118888657A).

Micro LED Patent Abstract:
This invention discloses an epitaxial structure for Micro LED and its fabrication method, as well as the Micro LED itself, which pertains to the field of semiconductor optoelectronic devices. The epitaxial structure consists of the following layers in sequence: a substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well (MQW) layer, a hole transport layer, and a P-type GaN layer.
- The multi-quantum well layer consists of alternating quantum well layers and quantum barrier layers.
- The quantum well layers are made of InxGa1-xN, while the quantum barrier layers consist of stacked InyGa1-yN, AlzGa1-zN, and BwGa1-wN layers, where x > y.
- The thickness of the quantum barrier layers is less than 10 nm.
- The hole transport layer includes stacked AlαGa1-αN, BβGa1-βN, and AlN layers, with w > α > β.
This MicroLED epitaxial structure improves the light output efficiency of MicroLED devices, particularly at low current densities, thereby enhancing the display performance.

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