On November 5, 2024, Jiangxi SMTC Semiconductor Co., Ltd. announced the application for an invention patent titled “A High Hole Injection Efficiency Micro LED Epitaxial Structure and Its Fabrication Method” (Patent Application No. CN118899378A).

Micro LED Patent Abstract:
This invention discloses a Micro LED epitaxial structure with high hole injection efficiency and its fabrication method, related to the semiconductor technology field. The Micro LED epitaxial structure includes a multi-quantum well (MQW) light-emitting layer, a multi-stage P-type hole injection enhancement layer, and a P-type semiconductor layer. The multi-stage P-type hole injection enhancement layer consists of the first, second, and third stages.

- The first-stage hole injection enhancement layer includes a first AlGaN layer and a first InGaN layer.
- The second-stage hole injection enhancement layer includes a second AlGaN layer and a second InGaN layer, with the second InGaN layer doped with Mg.
- The third-stage hole injection enhancement layer consists of a third AlGaN layer, third InGaN layer, and fourth InGaN layer, with the third and fourth InGaN layers doped with Mg.
This Micro LED epitaxial structure with high hole injection efficiency can significantly enhance the hole injection efficiency of the P-type semiconductor layer, improving the matching of electron-hole concentration in the multi-quantum well light-emitting region. As a result, it improves the light output efficiency of Micro LED chips at low operating current densities.

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