In December, Jiangxi SMTC Semiconductor Co., Ltd. revealed four new patents related to Micro LED technology. The details of these patents are as follows:

Patent for Blue Micro-LED Epitaxial Wafer and Fabrication Method
On December 10, this patent entered the authorization stage.

This invention pertains to semiconductor material technology and discloses a blue Micro-LED epitaxial wafer and its fabrication method. The wafer’s multiple quantum well (MQW) emission layers consist of sequentially grown shallow blue InGaN multi-quantum well layers and multi-quantum well barrier layers. The structure includes four layers: the first and second shallow blue quantum well layers, the third blue quantum well layer, and the fourth shallow blue quantum well layer, which are designed as superlattices.
By implementing this invention, the Micro-LED performance improves in terms of light efficiency and yield at low working current densities.
Patent for Blue Micro-LED Epitaxial Structure and Fabrication Method
On December 10, this patent entered the authorization stage.

This invention relates to the field of semiconductor materials and introduces a blue Micro-LED epitaxial structure and its fabrication method. The structure consists of several layers, including a substrate, buffer layer, N-type semiconductor layer, low-temperature stress-relief layer, multi-quantum well emission layer, electron-blocking layer, and P-type semiconductor layer. The multi-quantum well emission layer is made up of four sub-layers: first, second, third, and fourth shallow blue InGaN quantum well layers, each designed as a superlattice structure of InGaN multi-quantum wells and barrier layers.
This invention helps reduce stress when growing the InGaN quantum wells, improving the quality of the multi-quantum well emission layer and enhancing the hole injection efficiency of the P-type semiconductor layer. As a result, it increases light efficiency and yield for Micro-LED chips at low working current densities, making it suitable for small, low-current, and low-power blue Micro-LEDs.
Patent for Micro-LED Epitaxial Structure and Fabrication Method
On December 3, this patent entered the authorization stage.

This invention introduces a Micro-LED epitaxial structure and its fabrication method. The structure consists of a substrate and various stacked layers: buffer layer, undoped GaN layer, N-type doped GaN layer, insertion layer, multi-quantum well layer, electron-blocking layer, P-type doped GaN layer, and contact layer. The insertion layer includes sequentially arranged AlN, patterned GaSb, Al metal, and InGaN layers.
By introducing an insertion layer between the N-type doped GaN and multi-quantum well layers, the patent reduces stress during the growth of multi-quantum wells and decreases dislocation density in the quantum well layers, thus improving the Micro-LED’s internal quantum efficiency, lowering the operating voltage, and enhancing brightness.
Low-Voltage Micro-LED Epitaxial Wafer and Fabrication Method
On December 3, this patent entered the publication stage.
This invention relates to a low-voltage Micro-LED epitaxial wafer and its fabrication method, specifically in the field of semiconductor optoelectronic devices.

The low-voltage Micro-LED epitaxial wafer consists of multiple layers: substrate, buffer layer, undoped GaN layer, N-type GaN layer, multi-quantum well layer, electron-blocking layer, P-type GaN layer, and P-type contact layer. The P-type contact layer includes several sub-layers: porous AlInN layer, two-dimensional P-type BGaN layer, AlN roughening layer, P-type BInGaN nanocluster layer, and P-type AlInGaN roughening layer. The porous AlInN layer is created through H2 etching, while the P-type AlInGaN roughening layer is formed by N2 roughening.
Implementing this invention reduces the operating voltage and enhances light extraction efficiency, which leads to higher luminous efficiency.
Disclaimer: The views and opinions expressed in this article are those of the original authors and do not necessarily reflect the official policy or position of MiniMicroLED Insights . While we strive to ensure the accuracy and reliability of the information provided, the content on this website may include translations, re-edited versions of second-hand information, or information derived from unverifiable sources. MiniMicroLED Insights makes no representations or warranties, express or implied, regarding the completeness, accuracy, or timeliness of such content. The information in this article is for informational purposes only and should not be construed as professional advice. Any reliance you place on such information is strictly at your own risk. To the fullest extent permitted by law, MiniMicroLED Insights disclaims all liability for any direct, indirect, incidental, consequential, or punitive damages arising out of your use of, or reliance on, the information contained in this article.
Copyright Notice: This article may include translated and re-edited content derived from various online sources, including websites and social media platforms. While we strive to credit the original authors and sources to the best of our ability, we may not always be able to verify the original source of the content. All rights to the original content remain with the original author or source publication. Where applicable, this content is reproduced for educational and informational purposes under the fair use doctrine. If you believe any content on this site infringes upon your intellectual property rights, or if you are the copyright owner and believe we have not credited you correctly, please contact us at minimicroled.business@gmail.com. We will investigate and take corrective action, including removing or properly crediting the content if necessary.
Content sourced and adapted by MiniMicroLED Insights (Doris).