Recently, SMTC, ChangeLight, Nationstar Semiconductor, and RaySolve have announced their latest Micro LED patents, which cover areas such as Micro LED testing, chip fabrication, and display panel production.
SMTC: Micro LED Testing Equipment
SMTC has revealed a utility model patent titled “Micro LED Testing Equipment” with the publication number CN221350483U, made public on July 16, 2024.
This utility model discloses a Micro LED testing apparatus, consisting of an ultraviolet light source, a transparent substrate, a photomask plate, a filter, and a CCD detection probe, arranged in sequence from bottom to top. Micro LED chips to be tested are placed on the transparent substrate, and the photomask plate has light transmission holes that align with the positions of the Micro LED chips. This Micro LED testing equipment allows for rapid screening and removal of defective chips.
ChangeLight: A Micro LED Chip and Its Fabrication Method
Xiamen Future Display Technology Research Institute Co., Ltd., a subsidiary of ChangeLight, recently published an invention patent titled “A Micro LED Chip and Its Fabrication Method,” with the publication number CN118335867A. This patent is designed to further enhance the luminous efficiency of Micro LED chips.
Specifically, the patent discloses a Micro LED chip and its fabrication method, which fall within the field of semiconductor light-emitting diodes. The Micro LED chip consists of a substrate and a quantum well layer, where the aluminum component concentration in the AlInP barrier layer of the quantum well gradually increases in the first direction. This increases the potential difference between the GaInP quantum well layer and the AlInP barrier layer, leading to enhanced electron-hole recombination by confining carriers within the active region. This results in improved lateral and vertical current spread, thereby increasing the luminous efficiency and brightness of the Micro LED chip. Additionally, the higher aluminum content in the AlInP barrier layer ensures better crystal growth quality in the active region by avoiding material mismatches with the low-potential GaInP quantum well layer.
Nationstar Semiconductor: Two Micro LED Display Preparation Patents
Nationstar Semiconductor has announced a patent titled “Micro LED Display Device and Its Fabrication Method,” with the application publication number CN118367069A.
This invention discloses a method for preparing a Micro LED display device that includes the following steps:
(1) Providing a Micro LED emitting structure, comprising a substrate, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer, and fabricating a stress compensation layer on the back of the substrate;
(2) Fabricating a current spreading layer, a first bonding layer, and a first temporary bonding layer on the P-type semiconductor layer;
(3) Providing a driving substrate and fabricating a second bonding layer and a second temporary bonding layer on its surface;
(4) Bonding the Micro LED chip to the driving substrate through a bonding process;
(5) Preparing individual Micro LED pixels;
(6) Depositing a passivation layer between the individual pixels and exposing the N-type semiconductor layer;
(7) Fabricating a shared N-electrode outside the passivation layer;
(8) Fabricating a metal reflection layer between the individual Micro LED pixels, resulting in a Micro LED display device.
Additionally, Nationstar has also published a patent titled “A Micro LED Display Panel and Its Fabrication Method,” with the application publication number CN118367070A.
This invention describes a method for fabricating a Micro LED display panel, including the following steps:
(1)Providing a semiconductor light-emitting structure;
(2) Fabricating a current spreading layer, a first metal reflection layer, and a first bonding layer on the semiconductor light-emitting structure;
(3) Providing a driving substrate with spaced second bonding layers;
(4) Bonding the semiconductor light-emitting structure to the driving substrate, forming a metal bonding layer;
(5) Preparing individual Micro LED pixels;
(6) Depositing a passivation layer between the individual Micro LED pixels and exposing the N-type semiconductor layer;
(7) Fabricating a shared N-electrode outside the passivation layer;
(8) Fabricating a second metal reflection layer between the individual Micro LED pixels and applying a phosphor layer on the second metal reflection layer to form a Micro LED display panel. This invention reduces the thickness of the metal bonding layer, minimizing etching damage to the chip sidewalls.
RaySolve: Micro LED Display Chip and Its Fabrication Method
RaySolve has been granted a patent titled “Micro LED Display Chip and Its Fabrication Method,” with the authorization publication number CN118099336B.
This patent provides a Micro LED display chip and its fabrication method. The chip includes a driving panel, multiple LED units, and a light-blocking layer. The LED units are spaced apart on one side of the driving panel’s surface, while the light-blocking layer defines multiple grid holes that correspond to and house each LED unit. The distance between the light-blocking layer and the driving panel is less than that between the LED unit’s light-emitting layer and the driving panel. This arrangement effectively reduces or prevents optical crosstalk between adjacent LED units, enhancing the brightness of the Micro LED display chip.
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