SiTan Tech, a leading technology company based in Shenzhen, has recently applied for a Micro LED patent that aims to improve the optoelectronic efficiency of Micro LED displays. The patent, titled “Micro-LED Emissive Structure and Its Manufacturing Method and Electronic Devices”, was published by the National Intellectual Property Administration (NIPA) under publication number CN118919614A. The application was filed in August 2024.

Details of the Micro LED Patent
The patent outlines a method for manufacturing a Micro LED emissive structure, along with the Micro LED emissive structure and associated electronic devices. The process includes several key steps:
- Growing a Buffer Layer and Epitaxial Layer: The manufacturing method starts by growing a buffer layer and an epitaxial layer on a substrate.
- Formation of Mask Passivation Layer: A mask passivation layer is formed on top of the epitaxial layer.
- Dry Etching: The mask passivation layer undergoes dry etching to create multiple pixel spaces and pixel isolation regions.
- Layered Formation: In the etched mask passivation layer, the process proceeds to form a quantum well emissive layer, an electron confinement layer, and a current spreading layer.
- Wet Etching: The pixel isolation regions are etched by a wet etching process until the epitaxial layer is exposed. This results in the formation of step-like pixel structures with intact sidewalls.
Advantages of the New Method
The method outlined in the patent has several significant advantages:
- Intact Sidewalls: The pixel structures have intact sidewalls, which improves the optoelectronic efficiency of the Micro LED.
- Simplified Manufacturing Process: The patented method reduces the complexity of the traditional processing steps required for Micro LED production, making it more efficient and cost-effective.
SiTan Tech’s innovative approach promises to enhance the performance and scalability of Micro LED technologies, which are key to the future of display systems, lighting, and other optoelectronic applications.

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