Miniaturization of light-emitting diodes (LEDs) is crucial for ultrahigh-resolution displays. Metal halide perovskite materials, with their efficient light emission, long-range carrier transport, and scalable manufacturing processes, are suitable for bright micro-LED displays. However, thin-film perovskite materials, which exhibit uneven light emission distribution and surface instability during photolithography, are incompatible with micro-LED devices. To achieve micro-LEDs, continuous single-crystal perovskite thin films are required to eliminate grain boundaries, offer stable surfaces, and provide optical uniformity, but their growth and device integration still face challenges.
Here, Jiangang Feng from the University of Science and Technology of China, Yuchen Qiu from Jilin University, and Yuchen Wu from Chinese Academy of Sciences have achieved remote epitaxial growth of perovskite thin films, enabling seamless integration into micro-LEDs with pixel sizes as small as 4 microns. By introducing an ultra-nanometer graphene interlayer, they realized remote epitaxial growth and transferred the relaxed strained perovskite materials. These micro-LEDs exhibit a high electroluminescence efficiency of 16.7% and a high brightness of 4.0 × 10⁵ cd/m². This high-performance originates from defect suppression in the epitaxial perovskite material, effective carrier transport, high crystal quality, relaxed strain, and hundreds of nanometers of thickness. The self-supporting perovskite material can be integrated with commercial electronic platforms, enabling independent and dynamic control of each pixel, thus facilitating static image and video displays.
Through these research results, we envision on-chip perovskite photon sources, such as ultra-compact lasers and ultra-fast LEDs.
Meng Yuan, Jiangang Feng, Hui Li, Hanfei Gao, Yuchen Qiu, Lei Jiang & Yuchen Wu
Nature Nanotechnology (2025)
Published: 15 January 2025
https://doi.org/10.1038/s41565-024-01841-9
Abstract
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices. Continuous single-crystalline perovskite films with eliminated grain boundaries, stable surfaces and optical homogeneity are highly demanded for micro-LEDs, but their growth and device integration remain challenging. Here we realize the remote-epitaxy growth of crystalline perovskite films, enabling their seamless integration into micro-LEDs with a pixel size down to 4 μm. By incorporating a subnanometre graphene interlayer, we enable remote epitaxy and transfer of perovskites with relaxed strain. These micro-LEDs exhibit a high electroluminescence efficiency of 16.7% and a high brightness of 4.0 × 105 cd m−2. Such high performance stems from suppressed defects and efficient carrier transport in epitaxial perovskites with high crystallinity, relaxed strain and hundreds-of-nanometres thickness. The free-standing perovskites can be integrated with commercial electronic planes for independent and dynamic control of each pixel, thus facilitating both static image and video display. With these findings, we envision on-chip perovskite photonic sources such as ultracompact lasers and ultrafast LEDs.
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