Breakthroughs in InGaN Red Light LED Development
On September 17, Lumileds announced a groundbreaking advancement in the development of InGaN red light LEDs, addressing challenges posed by high concentrations of indium. Industry experts suggest that this could represent the most suitable technology for red Micro LEDs.
Advantages of InGaN Over AlInGaP Materials
Compared to AlInGaP materials, InGaN red light LEDs can coordinate manufacturing processes with green and blue LEDs also based on InGaN. The large-scale industrial capacity of InGaN brings economies of scale and is better suited for integration with silicon semiconductor manufacturing. Furthermore, InGaN red light shows promising application prospects in Micro LEDs, maintaining high efficiency even at micron-scale sizes and low current densities.
Achievements in Efficiency and Light Emission
Simultaneously, Lumileds scientists have demonstrated the vivid deep red light emitted by InGaN LEDs, achieving a wall-plug efficiency of 7.5% at a current density of 10 A/cm², with a dominant wavelength of 615 nm and a peak at 635 nm. This research addresses challenges related to high indium concentrations, including spectral peak shifts and broadening due to increased current density.
Overcoming Barriers to Micro LED Efficiency
Rob Armitage, Director of Nitride Epitaxy Development at Lumileds, stated that the efficiency of red Micro LEDs below 10 μm remains one of the obstacles to achieving cost-effective, high-performance Micro LED displays. This study confirms that the Lumileds team is on the path to resolving cost and efficiency issues for red InGaN, enabling it to meet application thresholds.
Future of High-Concentration Indium-Doped GaN
Based on these developments, industry insiders indicate that if peak shift and half-width issues can be resolved, high-concentration indium-doped GaN will emerge as the most suitable technology for red Micro LEDs.
Integrated RGB Light Emission for Enhanced Display Quality
Additionally, Lumileds has successfully achieved the emission of red, green, and blue light within a single InGaN epitaxy stack. This achievement will lead to Micro LEDs with outstanding color quality and electrical characteristics, integrating all three primary colors into a single Micro LED. Such advancements will positively impact the assembly of low-cost, high-yield Micro LED displays, ultimately enabling compact full-color displays for AR glasses.
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