Recently, a joint research team from Nanjing University, Xiamen University, Hefei University of Technology, Xiamen Future Display Research Institute, and Tianma Microelectronics successfully developed the world’s first RGB full gallium nitride (GaN)-based chip TFT Micro-LED full-color display. This marks the first successful verification of a new full-color technology solution, selected as one of the Top 10 Advances in China’s Third-Generation Semiconductor Technology for 2024. The results were officially announced at the 10th International Third-Generation Semiconductor Forum (IFWS 2024) in Suzhou from November 19 to 21.
What is Micro-LED Technology?
Micro-LED is a cutting-edge display technology that utilizes miniaturized semiconductor light-emitting diodes (LEDs) in a high-density matrix format. As an interdisciplinary application of LED chips and flat-panel display manufacturing, Micro-LED offers significant advantages in brightness, response speed, power consumption, transparency, and stability. It is widely regarded as the next-generation mainstream display technology. However, the performance of red Micro-LED chips has faced challenges due to bottlenecks in the high-quality InGaN quantum well epitaxial growth technology, making it difficult to break through the efficiency limitations of GaN-based red Micro-LEDs.
Breakthrough in Red Light Micro-LED Technology
The teams from Nanjing University and Hefei University of Technology have been working on content red light LED epitaxial growth. Through optimizing growth conditions and designing various stress regulation structures, they significantly improved the quality of high-In content InGaN quantum well materials. By using molecular beam epitaxy (MBE) technology, they successfully developed tunnel-junction red Micro-LED devices with over 90% injection efficiency. Their research also explored the performance degradation of these devices under high-temperature conditions, providing insights into the underlying physical mechanisms. This research was published in Applied Physics Letters, volume 124, under the title “High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact” ( https://doi.org/10.1063/5.0190000 ), and was selected as an Editor’s Pick by the journal’s editor-in-chief.
Partnership with Tianma Microelectronics
The technical teams from Nanjing University and Xiamen University further collaborated with Tianma Microelectronics to develop innovative methods for improving laser mass transfer efficiency and yield rates. Together, they produced the world’s first RGB full gallium nitride chip TFT-based ultra-retina display Micro-LED full-color screen with a pixel density of 403 PPI. This breakthrough confirmed the feasibility of full gallium nitride display technology and offers a new full-color technology solution for the future development of next-generation displays.
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