The State Intellectual Property Office (SIPO) of China reveals that Jiangxi SMTC Semiconductor Co., Ltd. has filed a patent application for a technology titled “Low Voltage Micro-LED Epitaxial Wafer and Its Manufacturing Method, Micro-LED,” with publication number CN119069598A. The patent application was filed in November 2024.
This invention discloses a low voltage Micro-LED epitaxial wafer and its manufacturing method, which pertains to the field of semiconductor optoelectronic devices. The low voltage Micro-LED epitaxial wafer consists of a series of layers, including a substrate, buffer layer, undoped GaN layer, N-type GaN layer, multi-quantum well layer, electron blocking layer, P-type GaN layer, and P-type contact layer. Notably, the P-type contact layer includes several stacked layers, including a porous AlInN layer, a 2D P-type BGaN layer, AlN roughening layer, P-type BInGaN nanocluster layer, and P-type AlInGaN roughening layer. The porous AlInN layer is produced by etching the AlInN layer with H2 etching, while the P-type AlInGaN roughening layer is created by N2 roughening of the P-type AlInGaN layer.
By implementing this invention, the operating voltage can be reduced, while the light extraction efficiency is enhanced, ultimately improving the luminescence efficiency.
About SMTC Semiconductor
SMTC Semiconductor, a wholly-owned subsidiary of SMTC Group, is a high-tech enterprise specializing in the research, development, and production of LED epitaxial wafers and chips. The company has established an independent manufacturing capacity for the entire production process, from sapphire substrates to patterned substrates (PSS), LED epitaxial wafers, and LED chips. Over the past three years, SMTC Semiconductor has seen continuous revenue and profit growth, with a monthly production and sales capacity reaching 1.1 million units (4-inch).
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