Peking University has recently filed a patent application for a new method entitled “Method for Manufacturing Micro-LED Arrays Using Maskless Secondary Epitaxy,” as announced by the National Intellectual Property Administration. The patent, with publication number CN117766642A, was filed in December 2023. This patent seeks to streamline the Micro LED fabrication process.
The patent summary describes a method for producing Micro LED chip arrays through maskless secondary epitaxy. The process begins with dry etching a GaN template to create a stress-relieved patterned GaN template. This patterned template allows for selective secondary epitaxy of structures like multiple quantum wells, thereby avoiding dry etching of these regions and preventing damage to the quantum wells’ sidewalls. The stress-relieved template effectively alleviates stress in the n-type doped GaN. Additionally, the pre-stressed layer grown on this template experiences partial stress relief, which expands the in-plane lattice constant. This expansion reduces the energy needed for indium incorporation, thereby increasing the amount of indium in the quantum wells. During the fabrication process, etching ensures that only the top surface of the GaN micropillar array is c-plane, serving as the growth surface. This selective secondary epitaxy does not require an additional mask, thus simplifying the Micro LED manufacturing process.
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