Micro-LED is an emerging display technology with numerous advantages, including ultra-small size, high brightness, superior contrast, long lifespan, low power consumption, and fast response times, making it suitable for a wide range of potential applications. Currently, Micro-LED is primarily utilized in large-scale displays and AR near-eye displays. However, with continuous advancements in technology and reductions in cost, Micro-LED is gradually being adopted in wearables, automotive displays, and other sectors.
Recently, research teams from Chinese universities have made significant strides in the field of Micro-LED technology, further expanding its applications to areas such as optical communication and deep ultraviolet (DUV) technology.
Zhengzhou University Team Develops New Technique to Improve DUV Micro-LED Efficiency
According to recent reports, research teams from Zhengzhou University, Zhengzhou Institute of Rail Transit, and North Minzu University have published a new method for improving the efficiency of DUV Micro-LEDs in the journal Scientific Reports.
The researchers explained that standard DUV Micro-LEDs suffer from severe electron leakage and low hole injection efficiency. Additionally, as the device size decreases, sidewall defects increase, further reducing efficiency. To address this, the team introduced polarized bulk charges into the p-HSL (hole-supply layer) and n-ESL (electron-supply layer) to enhance carrier recombination and improve injection efficiency.

Through this new approach, the research team reported a 77.93% increase in electron density and a 93.6% increase in hole density for DUV Micro-LEDs. The light output power reached 31.04 W/cm², and the maximum external quantum efficiency (EQE) achieved 2.91%. Even at a current density of 120 A/cm², the efficiency dropped by only 2.06%.
Xiamen University and NYCU Develop Red/Yellow Micro-LEDs for Optical Communication
Researchers from Xiamen University and Taiwan’s National Yang Ming Chiao Tung University (NYCU) have made advancements in optical communication by using indium gallium nitride (InGaN) yellow and red Micro-LEDs in visible light communication (VLC) systems, achieving higher communication efficiency.
The researchers pointed out that compared to silicon-based photodiodes commonly used in optical communication systems, InGaN-based photodiodes offer the advantages of low noise and high sensitivity.
This study demonstrated that red and yellow Micro-LEDs exhibited better responses to blue light than previously used shorter-wavelength Micro-LED photodiodes.
The research also highlighted that long-wavelength InGaN Micro-LEDs show potential for applications in novel display technologies and visible light communication. The team fabricated red and yellow Micro-LEDs as optical communication transmitters and photodiodes (PDs), using stress modulation engineering and atomic layer deposition (ALD) technology to enhance transmission and detection performance.
The experimental results showed that when used as communication transmitters, the red and yellow Micro-LEDs achieved high modulation bandwidths of 439.7 MHz and 532.5 MHz, respectively, at a current density of 2000 A/cm². This allowed for data transmission rates of 1.9 Gbps and 2.4 Gbps. When functioning as photodiodes, the long-wavelength Micro-LEDs with high indium-content quantum wells exhibited extended wavelength absorption edges, promising higher blue light response while filtering out fluorescence components.
Furthermore, the red and yellow Micro-LED photodiodes showed overlapping response spectra with most blue signals, with responsivities reaching 0.208 A/W for red and 0.135 A/W for yellow at a wavelength of 450 nm—higher than existing InGaN-based photodetectors.
The researchers concluded that due to wavelength selectivity, long-wavelength Micro-LED photodiodes could filter out slow fluorescent emissions, achieving white light modulation bandwidths several times higher than those of silicon-based detectors.
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