Overview of the Innovative Process
A research team led by Professor Young Rag Do at Kookmin University in South Korea has developed a novel top-down process for manufacturing and isolating sub-micron gallium nitride (GaN) Micro LEDs. This process combines electrochemical etching and ultrasonic chemical separation techniques to etch porous layers to isolate Micro LEDs.
Performance of the New LEDs
The researchers produced gold-plated GaN blue LEDs using this technique, achieving an external quantum efficiency (EQE) of 6.21% at a voltage of 4.0 V and a luminous efficacy of 1070 cd/m² at 10.0 V. The diameter of these LEDs is 750 nanometers.
Investigating Key Variables
Additionally, the researchers explored the impact of electrochemical variables on the nanopore size, separation rate, and emission characteristics of the point-like LEDs. They also examined how solvent types affect the ultrasonic separation process utilizing sonochemistry.
Implications for Micro LED Technology
This research demonstrates the potential of the top-down process for manufacturing Micro LEDs, which could significantly enhance the performance of Micro LED displays while reducing production costs. By optimizing the electrochemical and ultrasonic chemical processes, the researchers have increased the assembly yield and performance of Micro LEDs, paving the way for advancements in future Micro LED display technologies.
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