Introduction to Selective Thermal Oxidation (STO)
Recently, the Advanced Semiconductor Laboratory at King Abdullah University of Science and Technology (KAUST) demonstrated a novel method for defining Micro LED pixels called Selective Thermal Oxidation (STO). This approach eliminates the need for plasma etching in the pixel manufacturing process, providing a new solution for enhancing Micro LED performance.
Mechanism of STO Technology
KAUST engineers selectively oxidized the non-pixel regions of the chip through a high-temperature thermal annealing process. This modification caused changes in the p-layer and InGaN/GaN multiple quantum well structures in the non-pixel areas, rendering them non-emissive. With the STO process, Micro LED pixels were effectively defined, exhibiting exceptional device performance characterized by low leakage current and high efficiency.
Versatility Across Different Colors
This method is broadly applicable to the fabrication of Micro LEDs in various colors (blue, green, red) using InGaN/GaN technology. It holds significant promise for future applications in micro-displays, visible light communication, and optical interconnect-based storage solutions.
Future Applications in AR/VR
The KAUST team aims to integrate Micro LEDs into augmented reality/virtual reality (AR/VR) products. Currently, the proposed STO technology has achieved Micro LED pixel emissions as small as 2.3 microns. The laboratory is planning to transition the manufactured devices to commercial micro-display panels for further validation.
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