Xiaowei Huang a, Taifu Lang a, Xuehuang Tang a, Yujie Xie a, Xin Lin a, Yifan Yang a, Shuaishuai Wang a, Xiongtu Zhou a, Yongai Zhang a, Jie Sun ab, Chang Lin c, Qun Yan ad
aNational and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
bQuantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden
cFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
dRich Sense Electronics Technology Co., Ltd., Quanzhou, 362200, ChinaReceived 28 July 2024, Revised 27 September 2024, Accepted 15 October 2024, Available online 19 October 2024, Version of Record 19 October 2024.
Materials Science in Semiconductor Processing, Volume 186, 2025, 109018,
Abstract
Micro-LEDs refer to light-emitting diodes with a size of less than 50 μm, which have superior performances compared to Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). Micro-LEDs are expected to constitute the mainstream electronic display technology in the future. Nevertheless, micro-LED technology is still facing some technical difficulties. Especially, in mass transfer technology, the non-parallel problem between the temporary substrate holding the micro-LED chips and the target substrate seriously affects the bonding quality of the micro-LED chips. To solve this problem, this paper proposes a Polydimethylsiloxane (PDMS)-based flexible composite structure temporary substrate (carrier) doped with dimethyl silicone oil, which is capable of generating a deformation of 6 μm under a pressure of 1 MPa and maintaining this property up to 250 °C. Utilizing this deformation property to cope with the non-parallel problem during the bonding process can significantly improve the bonding quality and yield of micro-LEDs. We placed 1600 (40 × 40) micro-LED chips of size 30 μm × 15 μm on the carrier with a chip pitch of 222 μm. The carrier was heat-treated at 250 °C for 2 min as an adhesion reduction method. Under a bonding temperature of 180 °C and a bonding pressure of 0.3 MPa, bonding of the micro-LEDs with a 1.98-inch thin film transistor (TFT) was implemented using the carriers. A micro-LED green display with a PPI of 114 was successfully fabricated, with a display yield of 95.18 % and a brightness of 18,710 cd/m2. The method developed in this paper can overcome the key challenges of micro-LEDs mass transfer technology and pave the way for the industrialization of micro-LEDs.
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