Jiangsu Institute of Advanced Semiconductors Ltd. (IASEMI) has applied for an invention patent titled “Micro LED Device and Its Manufacturing Method,” with the application publication number CN118867068A and a publication date of October 29, 2024.

Micro LED Patent Summary:
The invention discloses a Micro LED device and its manufacturing method. This method includes sequentially forming an N-type layer, a first light-emitting structure, and a first dielectric layer on a substrate. A portion of the above layers is removed to form spaced-out first protrusions, first grooves, second protrusions, second grooves, and third protrusions. A second dielectric layer is formed in the first and second grooves. At least part of the first and second dielectric layers is removed to expose the first light-emitting structure and form a first hole, followed by the formation of the first P electrode. The second dielectric layer in the first groove is removed, and a second light-emitting structure and a second P electrode are formed sequentially at the bottom of the first groove. The second dielectric layer in the second groove is removed, and a third light-emitting structure and a third P electrode are formed. The first and second dielectric layers on the third protrusion are removed to expose the N-type layer and form the N electrode.
This method ensures the purity of the color and uniformity of brightness, improving the issues of low luminous efficiency and poor color consistency.
About Jiangsu Institute of Advanced Semiconductors Ltd.
Jiangsu Institute of Advanced Semiconductors Ltd. (IASEMI) was registered in July 2019 in Suzhou Industrial Park. It operates as a market-oriented research and development institution, focusing on advancing third-generation semiconductor technology. The Institute aims to cultivate and develop the industry applications of third-generation semiconductors in fields such as new display technologies, 5G communication, power electronics, environmental health, and more.

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