According to the State Intellectual Property Office, Jiangsu Huaxing Optoelectronics Technology Co., Ltd. (HXPOTO) has been granted a patent for a Micro-LED epitaxial wafer and its fabrication method. The patent authorization number is CN112382707B, and the application was filed in December 2020.
Patent Overview
This invention relates to the field of semiconductor technology, specifically concerning an epitaxial wafer for Micro-LED applications and its manufacturing method. The method includes the following steps:
- Step 1: Select a substrate.
- Step 2: Sequentially grow a buffer layer, a stress and warpage control layer, an N-type semiconductor layer, an active layer, an electron-blocking layer, and a P-type semiconductor layer on the substrate.
- Step 3: Grow a contact layer on the P-type semiconductor layer.
- Step 4: After the epitaxial growth process is completed, perform an annealing treatment on the epitaxial wafer, followed by cooling the wafer to room temperature to complete the fabrication.
This method effectively controls the warpage and stress during the underlying epitaxy process, significantly improving the consistency of yield at both the edge and center of the wafer.
About Huaxing Optoelectronics(HXPOTO)
Founded in 2016, Jiangsu Huaxing Optoelectronics Technology Co., Ltd. is located in Xuzhou and focuses on the manufacturing of computers, communication equipment, and other electronic devices.
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