SeungJe Lee, Yun Jae Eo, Minji Ko, Soomin Ahn, Selim Yun, Hyeng Jin Kim, Eunha Hong, Yuna Kwon, Huiyeong Kang, Yong Jae Lee, Gang Yeol Yoo, Keyong Nam Lee, Jae Kyu Song, Jong Kyu Kim, Hyun Min Cho & Young Rag Do
Published: 04 November 2024
Nature Communications volume 15, Article number: 9536 (2024)
Abstract
Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, nanorod-light-emitting diodes utilize inkjet and dielectrophoretic assembly techniques. Nevertheless, the small volume and edge-directed emission of nanorod-light-emitting diodes necessitate brightness and light extraction improvements. As an alternative, we propose dielectrophoretic-friendly fin-light-emitting diodes, designed to enhance brightness and light extraction efficiency through face-selective dielectrophoretic assembly technology. Our results confirm the potential for next-generation inorganic displays, with a wafer utilization ratio exceeding 90%, a vertical assembly ratio of 91.3%, and a pixel production yield of 99.93%. Moreover, blue fin-light-emitting diodes achieve an external quantum efficiency of 9.1% and a brightness of 8640 cd m−2 at 5.0 V, which, even at this early stage, are comparable to existing technologies.
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