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    Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly

    Doris MiniMicroLEDBy No Comments5 Mins Read11 Views
    Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly
    Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly

    SeungJe Lee, Yun Jae Eo, Minji Ko, Soomin Ahn, Selim Yun, Hyeng Jin Kim, Eunha Hong, Yuna Kwon, Huiyeong Kang, Yong Jae Lee, Gang Yeol Yoo, Keyong Nam Lee, Jae Kyu Song, Jong Kyu Kim, Hyun Min Cho & Young Rag Do

    Published: 04 November 2024

    Nature Communications volume 15, Article number: 9536 (2024)

    DOI: https://doi.org/10.1038/s41467-024-53965-0

    Table of Contents

    Abstract

    Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, nanorod-light-emitting diodes utilize inkjet and dielectrophoretic assembly techniques. Nevertheless, the small volume and edge-directed emission of nanorod-light-emitting diodes necessitate brightness and light extraction improvements. As an alternative, we propose dielectrophoretic-friendly fin-light-emitting diodes, designed to enhance brightness and light extraction efficiency through face-selective dielectrophoretic assembly technology. Our results confirm the potential for next-generation inorganic displays, with a wafer utilization ratio exceeding 90%, a vertical assembly ratio of 91.3%, and a pixel production yield of 99.93%. Moreover, blue fin-light-emitting diodes achieve an external quantum efficiency of 9.1% and a brightness of 8640 cd m−2 at 5.0 V, which, even at this early stage, are comparable to existing technologies.

    a Schematic comparison of nanorod LED and fin-LED. Optical characteristics of fabricated conventional nanorod LED and fin-LED. b SEM images of individually separated nanorod LED. c SEM images of individually separated fin-LED. All scale bars represent 5 μm. d PL spectra of nanorod LED and fin-LED under excitation light with a wavelength of 355 nm (Inset: PL emission images of nanorod LED and fin-LED, scale bars represent 10 μm). e CL spectra of nanorod LED and fin-LED (Inset image: panchromatic CL images of nanorod LED and fin-LED, scale bars represent 1 μm). f EL spectra of nanorod LED and fin-LED under an applied voltage of 8 V. Inset: EL emission images of nanorod LED (left) and fin-LED (right). g, h Normalized emission angular profiles of single nanorod LED and fin-LED.
    a, b Schematic and SEM results image of fin-LED solution dropped without applying voltage to electrodes. c, d Schematic and SEM result images of self-assembled fin-LEDs under DEP force. e, f schematic and SEM result images of fin-LEDs assembled on electrodes in various orientations. Scale bars in (b) and (d) represent 10 μm and that in (f) represents 1 μm.
    a Electric field simulation results. As the color changes from red to blue, the electric field weakens. The isolines are the electric field. b x-axis DEP force as function of LED structure and x-angle when central coordinates of LED were (0 μm, 0 μm, +2 μm) under applied power conditions of 20 Vpp and 10 kHz. c Torque differences according to fin-LED structure. d x-axis DEP torque as functions of LED structure and x-angle when central coordinates of LED were (0 μm, 0 μm, +2 μm) under applied power conditions of 20 Vpp and 10 kHz. The legends of (b) and (d) are identical; see Supplementary Fig. 4 for simulation details.
    a–d SEM image of fin-LED, fin-LED@SiO2, ITO/fin-LED, and ITO/fin-LED@SiO2 structures. To align the fin-LEDs of all structures, a sinusoidal function with a voltage of 20 Vpp and a frequency of 10 kHz was applied to the electrodes. To indicate the contact surface between the fin-LEDs and electrodes, different colored letters were marked on the individual LEDs: red p, p-GaN contact; blue n, n-GaN contact; green s, side contact. e–h Fractional ratios of different contacts of fin-LED, fin-LED@SiO2, ITO/fin-LED, and ITO/fin-LED@SiO2 structures (Scale bar represents 10 μm).
    a–b Optical microscope (OM) image of Fin-LED Array Cell assembled using DEP method a Bad pixel: fin-LED assembled in pixel (number of fin-LEDs: 14 ea) b Good pixel: fin-LED assembled in pixel (number of fin-LEDs: 25 ea), Scale bars represent 10 μm. c Distribution of fin-LED count per pixel, Inset image: Fin-LED pixel array image (pixel size: 42 × 42 μm2). Scale bars represent 40 μm. m mean, σ standard deviation.
    a Photographs of EL emission images. A voltage of 3.5 V was applied to all devices, and the light emitting area was 1 × 1 mm2. b EQE-current density curve. c Luminance-current density (L-J) curve. d Current-voltage (I-V) curve in 0 to +5 V range. e EL spectra and CIE color coordinates according to current density. f Fin-LED array cell emission images of fin-LED array. Scale bar represents 500 μm g OM image of fin-LED pixel (fin-LED array: 21 × 28 array / total 588 pixels, pixel size: 42 × 42 μm2) Scale bar represents 20 μm.

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